ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,429, issued on July 7, was assigned to DYNEX SEMICONDUCTOR Ltd. (Lincolnshire, Great Britain) and ZHUZHOU CRRC TIMES SEMICONDUCTOR Co. LTD (H... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,430, issued on July 7, was assigned to Semiconductor Manufacturing International (Beijing) Corp. (Beijing) and Semiconductor Manufacturing In... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,431, issued on July 7, was assigned to HC Semitek (Zhejiang) Co. Ltd. (Zhejiang, China). "Gallium nitride-based high electron mobility trans... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,432, issued on July 7, was assigned to Murata Manufacturing Co. Ltd. (Kyoto, Japan). "FET fin and vertical nanosheet formation using porous ... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,433, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method for forming semiconductor ... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,434, issued on July 7, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai). "Semiconductor structure and f... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,435, issued on July 7, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Co-integrated resonant tunneling diode and hig... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,436, issued on July 7, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris). "Electronic component based o... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,437, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure with bloc... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,438, issued on July 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "VTFET with buried power rails" was invented by... Read More